Interfacing Solution-Grown C60 and (3-Pyrrolinium)(CdCl3 ) Single Crystals for High-Mobility Transistor-Based Memory Devices

Jiake Wu; Congcheng Fan; Guobiao Xue; Tao Ye; Shuang Liu; Ruoqian Lin; Hongzheng Chen; Huolin L Xin; Ren-Gen Xiong; Hanying Li

doi:10.1002/adma.201501577

Interfacing Solution-Grown C₆₀ and (3-Pyrrolinium)(CdCl₃ ) Single Crystals for High-Mobility Transistor-Based Memory Devices

Adv Mater. 2015 Aug;27(30):4476-4480. doi: 10.1002/adma.201501577. Epub 2015 Jul 1.

Authors

Affiliations

¹ MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, PR China.
² Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA.
³ Ordered Matter Science Research Center, Southeast University, Nanjing, 211189, PR China.

PMID: 26134482
DOI: 10.1002/adma.201501577

Abstract

Aligned ferroelectric single crystals of (3-pyrrolinium)(CdCl₃ ) can be prepared from solution on top of aligned semiconducting C₆₀ single crystals using an orthogonal solvent. Memory devices based on these ferroelectric/semiconductor bilayered heterojunctions exhibit much larger hysteresis compared with that of only C₆₀ single crystals. More importantly, the introduction of the ferroelectric layer induces the memory window without dramatically reducing the charge mobility.

Keywords: field-effect transistors; memory; organic electronics; single crystals; solution processing.