Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics

Roshnee Sahoo; Lukas Wollmann; Susanne Selle; Thomas Höche; Benedikt Ernst; Adel Kalache; Chandra Shekhar; Nitesh Kumar; Stanislav Chadov; Claudia Felser; Stuart S P Parkin; Ajaya K Nayak

doi:10.1002/adma.201602963

Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics

Adv Mater. 2016 Oct;28(38):8499-8504. doi: 10.1002/adma.201602963. Epub 2016 Aug 8.

Authors

Affiliations

¹ Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany.
² Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Walter-Hülse-Str. 1, 06120, Halle, Germany.
³ Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany.
⁴ Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany. anayak@mpi-halle.mpg.de.
⁵ Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany. anayak@mpi-halle.mpg.de.

PMID: 27500768
DOI: 10.1002/adma.201602963

Abstract

Fully compensated ferrimagnets with tetragonal crystal structure have the potential for large spin-polarization and strong out-of-plane magnetic anisotropy; hence, they are ideal candidates for high-density-memory applications. Tetragonal Heusler thin films with compensated magnetic state are realized by substitution of Pt in Mn_3-x Pt_x Ga. Furthermore, the bilayer formed from compensated/uncompensated Mn-Pt-Ga layers is utilized to accomplish exchange bias up to room temperature.

Keywords: Heuslers; antiferromagnetic spintronics; compensated ferrimagnets; exchange bias; tetragonal thin films.