Herein, a self-vanishing resistive random-access memory (RRAM) device is introduced utilizing cesium iodide (CsI) as the resistive layer, with indium tin oxide and silver (Ag) as electrodes. CsI-RRAM exhibits a high ROFF/ON ratio (>106), stable data retention over 104 s, and a high yield of functional devices. Electrical characterization confirms iodine vacancy-based filamentary resistive switching, further validated by investigations into the work function and environmental influences. While the devices exhibit excellent thermal stability, performance degradation under high humidity is effectively mitigated through PMMA encapsulation, enhancing their robustness. The CsI-RRAM reliably transitions between high-resistance (HRS) and low-resistance states (LRS), demonstrating its functionality as a variable resistor during μ-LED illumination. Additionally, the rapid dissolution of the CsI layer in deionized water within 90 s underscores its potential as a self-vanishing memory technology, making it uniquely suited for transient memory applications. This exceptional combination of high performance, environmental adaptability, and self-vanishing properties establishes CsI-RRAM as a promising option for transient and destructible memory systems. The devices are anticipated to play critical roles in envisioned applications such as the military, security, and intelligence sectors, where protecting sensitive information and ensuring secure hardware disposal are of utmost importance.
Keywords: RRAM; cesium iodide; iodine vacancy; physically transient; security.