Buried Interface Modification Strategy for Efficient Tin-Based Perovskite Light-Emitting Diodes

Zheng Jiang; Jie Yang; Wenbin Wang; Yangyu Liu; Yuhan Zhou; Jing Xu; Wang Wang; Hongyao Ding; Ya Zhong; Haifeng Zhao; Sai Bai; Weidong Xu; Wing Chung Tsoi; Tao Yu; Chunxiong Bao; Xiaodong Shen; Pengpeng Teng

doi:10.1002/anie.202507914

Buried Interface Modification Strategy for Efficient Tin-Based Perovskite Light-Emitting Diodes

Angew Chem Int Ed Engl. 2025 Jun 11:e202507914. doi: 10.1002/anie.202507914. Online ahead of print.

Authors

Zheng Jiang^#¹, Jie Yang^#², Wenbin Wang¹, Yangyu Liu³, Yuhan Zhou³, Jing Xu³, Wang Wang², Hongyao Ding¹, Ya Zhong¹, Haifeng Zhao^{4

5}, Sai Bai⁴, Weidong Xu⁶, Wing Chung Tsoi⁷, Tao Yu³, Chunxiong Bao³, Xiaodong Shen¹, Pengpeng Teng^{1

8}

Affiliations

¹ Jiangsu Collaborative Innovation Center for Advanced Inorganic Functional Composites, College of Materials Science and Engineering, Nanjing Tech University, Nanjing, 211816, China.
² Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
³ National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
⁴ Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China.
⁵ Yibin Institute of UESTC, University of Electronic Science and Technology of China (UESTC), Yibin, 644005, China.
⁶ Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China.
⁷ SPECIFIC, Faculty of Science and Engineering, Swansea University, Bay Campus, Fabian Way, Swansea, SA1 8EN, UK.
⁸ Quechen Silicon Chemical Co., Ltd, Wuxi, China.

^# Contributed equally.

PMID: 40500232
DOI: 10.1002/anie.202507914

Abstract

Tin (Sn)-based perovskites show great potential for environmentally friendly and high-performance light-emitting diodes (LEDs). However, the development of Sn-based perovskite LEDs (PeLEDs) lags significantly behind that of lead-based perovskites. This is mainly due to the faster crystallization rate of Sn-based perovskites that leads to a higher defect density in Sn-based perovskite films, thereby serious nonradiative recombination. Here, we demonstrated a buried interface modification (BIM) strategy to regulate the crystallization kinetics of Sn-based perovskite films by using carboxylate as multifunctional surface modifiers. We reveal that the buried interface is critical to improve the nucleation and crystallization of Sn-based perovskite films. As a result, efficient near-infrared Sn-based PeLEDs were achieved with an external quantum efficiency (EQE) of 11.9%. This work suggests an efficient and elegant route to obtain high-performance Sn-based perovskite films and devices.

Keywords: Buried interface; Crystallization; Light‐emitting diodes; Modification; Tin‐based perovskites.

Abstract

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