Sulfur-Rich Hole-Transporting Materials for Inverted Perovskite Solar Cells

Yogesh S Tingare; Lin-Yi Liu; Chaochin Su; Wen-Zheng Lin; Chen-Yi Yen; Wei-Hong Chen; Sheng-Hung Teng; Mei-Jie Chen; Chen-Wei Chu; Wen-Ren Li

doi:10.1021/acs.orglett.5c01859

Sulfur-Rich Hole-Transporting Materials for Inverted Perovskite Solar Cells

Org Lett. 2025 Jun 19. doi: 10.1021/acs.orglett.5c01859. Online ahead of print.

Authors

Affiliations

¹ Institute of Organic and Polymeric Materials/Research and Development Center for Smart Textile Technology, National Taipei University of Technology, Taipei 106344, Taiwan.
² Department of Chemistry, National Central University, Zhongli 32001, Taiwan.

PMID: 40534566
DOI: 10.1021/acs.orglett.5c01859

Abstract

We introduce an electron-rich hole-transporting material (HTM), WZ103, based on a sulfur-rich terthiophene core. This HTM features two triphenylamine donor groups at the 4,4″ positions and four additional triphenylamine groups at the 5,5″ positions connected by vinylene linkages. Its good hole-transporting properties, reduced series resistance, and effective defect passivation contribute to the improved performance. With a remarkable power conversion efficiency of 19.48%, this HTM ranks among the top nonfused terthiophene-based, dopant-free HTMs.