Flexible self-powered MoS2/LaVO3photodetector enhanced by graphene quantum dots interlayer

Hyo Han Kim; Da Hee Kim; Bo Gyu Choi; Do Hoon Kim; Si Duck Oh; Dong Hee Shin; Hosun Lee

doi:10.1088/1361-6528/ade9cc

Flexible self-powered MoS₂/LaVO₃photodetector enhanced by graphene quantum dots interlayer

Nanotechnology. 2025 Jul 8;36(27). doi: 10.1088/1361-6528/ade9cc.

Authors

Hyo Han Kim¹, Da Hee Kim^{2

3}, Bo Gyu Choi^{2

3}, Do Hoon Kim⁴, Si Duck Oh⁵, Dong Hee Shin⁴, Hosun Lee^{2

3}

Affiliations

¹ Department of Materials Science & Engineering, Inha University, Incheon 22212, Republic of Korea.
² Department of Applied Physics, Kyung Hee University, Yongin 17104, Republic of Korea.
³ Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea.
⁴ Department of Smart Sensors Engineering, Kyungkuk National University, Andong, Gyeongbuk 36729, Republic of Korea.
⁵ Smart Energy and Nano Photonics R&D Group, Korea Institute of Industrial Technology (KITECH), Gwangju 61012, Republic of Korea.

PMID: 40587971
DOI: 10.1088/1361-6528/ade9cc

Abstract

High-performance self-powered photodetectors (PDs) have attracted significant interest as highly efficient optoelectronic devices capable of operating without an external power source. In this study, we demonstrate a flexible MoS₂/graphene quantum dots (GQDs)/LaVO₃heterojunction PD fabricated on a polyethylene terephthalate substrate. The device performance was systematically evaluated with and without the GQDs interlayer. The incorporation of GQDs effectively suppresses charge recombination, leading to substantial improvements in key performance metrics such as responsivity, external quantum efficiency, and detectivity. Furthermore, the MoS₂/GQDs/LaVO₃PD exhibited excellent mechanical stability, maintaining stable photocurrent and dark current levels even after 3000 continuous bending cycles. These results highlight the potential of the MoS₂/GQDs/LaVO₃PD as a highly promising candidate for next-generation flexible optoelectronic applications.

Keywords: LaVO3; MoS2; flexibility; graphene quantum dots; interfacial layer; photodetector; self-powered.