Fu YY - Search Results

1

[Raman spectroscopic study on the iron oxide film prepared by iron oxidation method].

Hu T, Lu X, Yan Y, Fu YY, Zhang H, Zhang SL. Hu T, et al. Among authors: fu yy. Guang Pu Xue Yu Guang Pu Fen Xi. 2004 Sep;24(9):1072-4. Guang Pu Xue Yu Guang Pu Fen Xi. 2004. PMID: 15762525 Chinese.

2

Bicrystalline hematite nanowires.

Wang R, Chen Y, Fu Y, Zhang H, Kisielowski C. Wang R, et al. J Phys Chem B. 2005 Jun 30;109(25):12245-9. doi: 10.1021/jp051197q. J Phys Chem B. 2005. PMID: 16852510

3

Toward High Carrier Mobility and Low Contact Resistance: Laser Cleaning of PMMA Residues on Graphene Surfaces.

Jia Y, Gong X, Peng P, Wang Z, Tian Z, Ren L, Fu Y, Zhang H. Jia Y, et al. Nanomicro Lett. 2016;8(4):336-346. doi: 10.1007/s40820-016-0093-5. Epub 2016 May 5. Nanomicro Lett. 2016. PMID: 30460292 Free PMC article.

4

Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes.

Yin R, Li C, Zhang B, Wang J, Fu Y, Wen CP, Hao Y, Shen B, Wang M. Yin R, et al. Fundam Res. 2021 Dec 8;2(4):629-634. doi: 10.1016/j.fmre.2021.11.027. eCollection 2022 Jul. Fundam Res. 2021. PMID: 38934000 Free PMC article.

5

Gate-controlled rectifying behavior in C70@SWNT networks.

Guo A, Fu Y, Liu J, Guan L, Shi Z, Gu Z, Huang R, Zhang X. Guo A, et al. J Phys Chem B. 2006 May 25;110(20):9923-6. doi: 10.1021/jp0602068. J Phys Chem B. 2006. PMID: 16706448

6

Thermally assisted tunnelling in ambipolar field-effect transistors based on fullerene peapod bundles.

Guo A, Fu Y, Guan L, Liu J, Shi Z, Gu Z, Huang R, Zhang X. Guo A, et al. Nanotechnology. 2006 May 28;17(10):2655-60. doi: 10.1088/0957-4484/17/10/035. Epub 2006 May 5. Nanotechnology. 2006. PMID: 21727520

7

Discrete polarization absorption property of carbon nanotubes studied by using scanning near-field optical microscope.

Zhang W, Fu Y, Li H, Gu Z, Zhang Z, Zhu X. Zhang W, et al. Scanning. 2004 Sep-Oct;26(5 Suppl 1):I21-5. Scanning. 2004. PMID: 15540808

8

Hysteresis-free carbon nanotube field effect transistors without any post-treatment.

Wang C, Fu Y, Guo A, Liu J, Guan L, Shi Z, Gu Z, Huang R, Zhang X. Wang C, et al. J Nanosci Nanotechnol. 2009 Feb;9(2):1004-7. doi: 10.1166/jnn.2009.c073. J Nanosci Nanotechnol. 2009. PMID: 19441441

9

Synthesis, characterization and properties of C60 nanocrystals, nanowires and hierarchical nanostructures.

Liu J, Fu Y, Guo A, Wang C, Shi Z, Gu Z, Huang R, Zhang X. Liu J, et al. J Nanosci Nanotechnol. 2009 Feb;9(2):1555-7. doi: 10.1166/jnn.2009.c201. J Nanosci Nanotechnol. 2009. PMID: 19441569

10

Metal Nanogap Memory: Performances and Switching Mechanism.

Tian Z, Yao G, Ren Z, Yu D, Tian J, Li M, Peng P, Ren L, Liu F, Fu Y. Tian Z, et al. ACS Appl Mater Interfaces. 2024 May 22;16(20):26360-26373. doi: 10.1021/acsami.4c01597. Epub 2024 May 13. ACS Appl Mater Interfaces. 2024. PMID: 38741057

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